Department of Electrical Engineering,
School of Engineering
Email Contact: email@example.com
Ph. D, Indian Institute of Technology Roorkee, 2011
M.Tech. (Electronics with specialization in VLSI), Indian Institute of Technology Roorkee, 2006
B.E. (Electronics), Rajiv Gandhi Prodyogoki Vishwavidhyala, Bhopal, 2003
Assistant Professor, University of Petroleum & Energy Studies, Dehradun, July, 2011 – May 2012
Semiconductors & Nanotechnology, VLSI Technology & Design
MOSFET Modelling viz. TANNER SPICE (Simulation software); L-Edit (Layout editor for physical implementation of logic gates), S-Edit (Schematic editor for circuit level synthesis), High level synthesis, worked in VHDL platform
Laboratory and in-situ Nanotechnological investigations particularly involved with evaluation of parameters for nanostructures for electronic & photovoltaic applications
Sonal Singhal, Amit Kumar Chawla, Sandeep Nagar, Hari Om Gupta and Ramesh Chandra, “Photoluminescence measurements in the phase transition region of Zn1-xCdxS films,” Journal of Nanoparticle Research 12 (2010) 1415.
S. Singhal, A.K.Saxena and S.Dasgupta, “Effect of impurity compensation on electron mobilities in multiconduction bands of GaAs” J. Act. & Passive Electron.Dev.(USA) 2009.
S. Singhal, H. O. Gupta and R. Chandra “Fabrication of CdTe solar cell with the insertion of Cd1-xZnxS window layer with improved efficiency”, Nanothailnd Conference, Thailand, April 2011.
S.Singhal and A. Kumar “Network on Chip (NOC) security implementation for topological structure in HDL Environment” VLSI (Elsevier, Under Review)
Sonal Singhal, Amit Kumar Chawla, Hari Om Gupta and Ramesh Chandra, Effect of Laser Flux Density on ZnCdS Thin Films for their use in photovoltaic applications,” Thin Solid Films 518 (2009) 1402-1406.
S. Singhal, A.K.Saxena and S.Dasgupta “Estimation of various scattering parameters and 2-DEG from electron mobility calculations in the three conduction bands ?, L and X of Gallium Arsenide” Pramana (Ind Acd of Sci), vol 69, no 4, pp 687-694,2007.
National & International Recognition
Externally funded project under the Fast Track Young Scientist Scheme, DST, India (2012) on the fabrication of PV Devices
Availed Commonwealth Scholarship (Jan 2010 to Jan 2011) as split site Scholar at Energy & sustainable research division, University of Nottingham, UK
M.H.R.D. Scholarship for Ph.D., INDIA (2007)
M.H.R.D. Scholarship for M.Tech (2004)
Dr. Sonal has been working in the area of VLSI design and fabrication. Her research interests include topics like design of novel semiconductor electronic and optoelectronic devices, VLSI Technology & design, network realization in HDL. Dr. Singhal has several publications to her credit, including Current nanoscience, Science direct, Springer and JAP to name a few. She is the recipient of Commonwealth split site scholarship tenable at University of Nottingham, UK. She is also a recipient of the DST Young Scientist project under fast track scheme.