SCHOOL OF NATURAL SCIENCES
NATURAL SCIENCES
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Faculty
Department of Physics
Aloke Kanjilal
Associate Professor,
Department of Physics,
School of Natural Sciences
Education Details
Ph.D., in Physics, Indian Institute of Technology Delhi (IITD), India, 2003
M.Sc., in Physics, Indian Institute of Technology Delhi (IITD), India, 1998
Professional Experience
2010-2012 Postdoctoral Research Associate at Center for Materials Under Extreme Environment, School of Nuclear Engineering, Purdue University, USA
2007-2010 Alexander von Humboldt Research Fellow and Research Scientist at Semiconductor Materials Division, Helmholtz-Zentrum Dresden Rossendorf, Dresden, Germany
2004-2007 Research Scientist at LOTUS Surface Science Laboratory, Department of Physics, University of Rome “La Sapienza”, Rome, Italy
2003-2004 Postdoctoral Fellow at Nanomaterials Laboratory, National Institute for Materials Science, Tsukuba, Japan
2002-2003 Assistant Research Professor, Department of Physics and Astronomy, University of Aarhus, Denmark
Research Interests
Research interest is interdisciplinary in nature, covering a variety of outstanding problems in science and technology of condensed matter physics. It involves ideas, techniques and conundrums from a wide range of fields including materials science, thin film science and technology, surface and interface, nanoscience, ion beam physics, optoelectronics and spintronics. Initial focus is on the synthesis of surface nanopatterns by low energy ion beams, and study of their fundamental properties using varieties of surface sensitive techniques. The growth of nanostructures embedded in thin films and at surfaces will also be carried out. Structural, electronic, chemical and physical properties will be studied for fabrication of novel semiconductor device structures. The tunable properties of the group IV semiconductors will be investigated and will be extended to other compound semiconductors, alloys and carbon based materials. 
Select Publications
  1. Multilevel programming in NiOy/NiOx bilayer resistive switching devices” P. Sarkar, S. Bhattacharjee, A. Barman, A. Kanjilal, Asim Roy, Nanotechnology 27, 435701 (2016).

  2. Probing electron density across Ar+ irradiation-induced self-organized TiO2-x nanochannels for memory application” A. Barman, C.P. Saini, P. Sarkar, A. Roy, B. Satpati, D. Kanjilal, S.K. Ghosh, S. Dhar, A. Kanjilal, Appl. Phys. Lett. 108, 244104 (2016).

  3. Self-decorated Au nanoparticles on antireflective Si pyramids with improved hydrophobicity” C. P. Saini, A. Barman, M. Kumar,B. Satpati, T. Som, A. Kanjilal, J. Appl. Phys. 113, 134904 (2016).

  4. Defect-engineered optical bandgap in self-assembled TiO2 nanorods on Si pyramids” C. P. Saini, A. Barman, B. Satpati, S. R. Bhattacharyya, D. Kanjilal, A. Kanjilal, Appl. Phys. Lett. 108, 011907 (2016).

  5. “Self-organized titanium oxide nano-channels for resistive memory application” A. Barman, C. P. Saini, P. Sarkar, B. Satpati, S. R. Bhattacharyya, D. Kabiraj, D. Kanjilal, S. Dhar, A. Kanjilal, J. Appl. Phys. 118, 224903 (2015).

  6. “Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples” T. Basu, M. Kumar, S. Nandy, B. Satpati, C. Saini, A. Kanjilal, T. Som, J. Appl. Phys. 118, 104903 (2015).

  7. "60 keV Ar+-ion induced modification of microstructural, compositional, and vibrational properties of InSb" D. P. Datta, S. K. Garg, B. Satpati, P. K. Sahoo, A. Kanjilal, S. Dhara, D. Kanjilal, T. Som, J. Appl. Phys. 116, 143502 (2014).

  8. "Improved broadband antireflection in Schottky-like junction of conformal Al-doped ZnO layer on chemically textured Si surfaces" C. P. Saini, A. Barman, M. Kumar, P. K. Sahoo, T. Som, A. Kanjilal, Appl. Phys. Lett. 105, 123901 (2014).

  9. "Tailoring room temperature photoluminescence of antireflective silicon nanofacets" T. Basu, M. Kumar, A. Kanjilal, J. Ghatak, P. K. Sahoo, T. Som, J. Appl. Phys. 116, 114309 (2014).

  10. "Evolution of porous network in GaSb under normally incident 60 keV Ar+-ion irradiation" D. P. Datta, A. Kanjilal, S. K. Garg, S. Chatterjee, P. K. Sahoo, D. Kanjilal, T. Som, Appl. Surf. Sci. 310, 189 (2014).

  11. "Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence and vibrational properties" D. P. Datta, A. Kanjilal, B. Satpati, S. Dhara, T. D. Das, P. K. Sahoo, D. Kanjilal, T. Som, J. Appl. Phys. 116, 033514 (2014).

  12. “Tunable antireflection from conformal Al-doped ZnO films on nanofaceted Si templates” T. Basu, M. Kumar, P. K. Sahoo, A. Kanjilal, T. Som, Nanoscale Res. Lett. 9, 192 (2014).

  13. “Temporal evolution of nanoporous layer in off-normally ion irradiated GaSb” D. P. Datta, A. Kanjilal, S. K. Garg, P. K. Sahoo, D. Kanjilal, T. Som, J. Appl. Phys. 115, 123515 (2014).

  14. “Electron irradiation-enhanced water and hydrocarbon adsorption in EUV lithography devices” A. Al-Ajlony, A. Kanjilal, M. Catalfano, S. S. Harilal, A. Hassanein, Appl. Surf. Sci. 289, 358 (2014).

  15. "Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes" M. Kumar, A. Kanjilal, T. Som, AIP Advances 3, 092126 (2013).

  16. "Primary electron energy dependent flashover in surface polarity on Au films" M. Catalfano, A. Kanjilal, A. Al-Ajlony, S. S. Harilal, A. Hassanein, J. Appl. Phys. 113, 173702 (2013).

  17. “Tracking electron-induced carbon contamination and cleaning of Ru surfaces by Auger electron spectroscopy” A. Kanjilal, M. Catalfano, S. S. Harilal, A. Hassanein, B. Rice, J. Vac. Sci. Technol. A 30, 041401 (2012).

  18. Time dependent changes in extreme ultraviolet reflectivity of Ru mirrors from electron-induced surface chemistry” A. Kanjilal, M. Catalfano, S. S. Harilal, A. Hassanein, B. Rice, J. Appl. Phys. 111, 063518 (2012).

  19. “Probing temporal evolution of EUV assisted contamination on Ru mirror by X-ray photoelectron spectroscopy” A. Al-Ajlony, A. Kanjilal, M. Catalfano, M. Fields, S. S. Harilal, A. Hassanein, B. Rice, J. Vac. Sci. Technol. B 30, 021601 (2012).

  20. “Microstructure analysis at the interface of Er decorated Ge nanocrystals in SiO2” A. Kanjilal, S. Gemming, L. Rebohle, A. Muecklich, T. Gemming, M. Voelskow, W. Skorupa, M. Helm, Phys. Rev. B 83, 113302 (2011).

  21. “n-InAs nanopyramids fully integrated into silicon” S. Prucnal, S. Facsko, C. Baumgart, H. Schmidt, M. O. Leidke, L. Rebohle, A. Shalimov, H. Reuther, A. Kanjilal, A. Mücklich, M. Helm, J. Zuk, W. Skorupa, Nano Letters 11, 2814 (2011).

  22. Subsecond melt processing for achieving SiGe layers” M. Voelskow, A. Kanjilal, W. Skorupa, Curr. Appl. Phys. 10, 1309 (2010).

  23.  “Crystalline ripples at the surface of ion eroded strained Si0.8Ge0.2 epilayers”, A. Kanjilal, S. Prucnal, M. Minniti, W. Skorupa, M. Helm, S. Facsko, J. Appl. Phys. 107, 073513 (2010).

  24.  “Controlling blue-violet electroluminescence of Ge-rich Er-doped SiO2 layers by millisecond annealing using flash lamps”, A. Kanjilal, L. Rebohle, M. Voelskow, M. Helm, W. Skorupa, J. Appl. Phys. 107, 023114 (2010).

  25. “Temperature dependence of the crossover between the near-infrared Er and defect-related photoluminescence bands of Ge-rich Er-doped SiO2 layers”, A. Kanjilal, L. Rebohle, S. Prucnal, M. Voelskow, W. Skorupa, M. Helm, Phys. Rev. B 80, 241313 (R) (2009).

  26. “Defect-engineered blue-violet electroluminescence from Ge nanocrystal rich SiO2 layers by Er doping”, A. Kanjilal, L. Rebohle, M. Voelskow, W. Skorupa, M. Helm, J. Appl. Phys. 106, 026104 (2009).

  27. “Probing the impact of microstructure on the electroluminescence properties of Ge-nanocrystal embedded Er-doped SiO2 layers”, A. Kanjilal, L. Rebohle, N. K. Baddela, S. Zhou, M. Voelskow, W. Skorupa, M. Helm, Phys. Rev. B 79, 161302 (R) (2009).

  28. “Enhanced blue-violet light emission by inverse energy transfer to Ge nanocrystals via Er3+ ions in metal-oxide-semiconductor structures”, A. Kanjilal, L. Rebohle, M. Voelskow, W. Skorupa, M. Helm, Appl. Phys. Lett. 94, 051903 (2009).

  29. “Influence of annealing on the Er luminescence in Si-rich Si02 layers co-implanted with Er ions”,A. Kanjilal, L. Rebohle, M. Voelskow, W. Skorupa, M. Helm, J. Appl. Phys. 104, 103522 (2008).

  30. “Defect induced states in the electronic structure of a Cu(100)-benzenethiolate-pentacene heterostructure”, Aloke Kanjilal, Maria Grazia Betti, Carlo Mariani, J. Appl. Phys. 104, 063720 (2008).

  31. “Barrier formation at organic interfaces in a Cu(100)/benzenethiolate/pentacene heterostructure”, M. G. Betti, A. Kanjilal, C. Mariani, H. Vázquez, Y. J. Dappe, J. Ortega, F. Flores, Phys. Rev. Lett. 108, 027601 (2008).

  32. “Pentacene grown on self-assembled monolayer: adsorption energy, interface dipole and electronic properties”, Aloke Kanjilal, Luca Ottaviano, Valeria Di Castro, Marco Beccari, Maria Grazia Betti, Carlo Mariani, J. Phys. Chem. C 111, 286 (2007).

  33. “Impact of 100 MeV Au on the surface relaxed Si0.5Ge0.5 alloy films studied by atomic force microscopy”, A. Kanjilal, J. Lundsgaard Hansen, A. Nylandsted Larsen, D. Kanjilal, Surf. Sci. 600, 3087 (2006).

  34. “Magnetic behavior of (Al,Ge)65CuMn quaternary alloy quasicrystals”, Ratnamala Chatterjee, Aloke Kanjilal, J. Appl. Phys. 96, 503 (2004).

  35. “Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy”, A. Kanjilal, J. Lundsgaard Hansen, P. Gaiduk, A. Nylandsted Larsen, N. Cherkashin, A. Claverie, P. Normard, E. Kapalanakis, D. Skarlatos, D. Tsoukalas, Appl. Phys. Lett. 82, 1212 (2003).

Book Chapter
“Germanium quantum dots in SiO2: fabrication and characterization” A. Nylandsted Larsen, A. Kanjilal, J. Lundsgaard Hansen, P. Gaiduk, N. Cherkashin, A. Claverie, P. Normard, E. Kapalanakis, D. Tsoukalas, K.-H. Heinig, Physics, chemistry and application of nanostructures, 2003, Eds. V. E. Borisenko, S. V. Gaponenko, and V. S. Gurin (World Scientific Singapore, 2003) p. 439.
Patents
Verfahren zur Herstellung von SiC basierenden Dünnfilm Solarzellen mit erhöhter Effizienz” by M. Voelskow, A. Kanjilal and W. Skorupa, Deutsches Patent und Markenamt, Bundesrepublik Deutschland, DE 10 2009 055 215 A1 2011.09.29.

Verfahren zur Herstellung von Halbleiterstrukturen auf Silizium-Germanium-Basis mit erhöhter Effizienz” by M. Voelskow, A. Kanjilal and W. Skorupa, Deutsches Patent und Markenamt, Bundesrepublik Deutschland, DE 10 2008 035 846 A1 2010.02.04.
National & International Recognition
Reviewer of AIP journals
Alexander von Humboldt research Fellowship awarded by the Alexander von Humboldt Foundation in Bonn, Germany, 2007-2009.
INFM Research Scientist Fellowship granted by INFM-CNR, Italy, 2004-2007.
3rd prize for poster presentation for the title Silicon dioxide layers with embedded germanium nanocrystals in 1st annual iNANO meeting, January 21-22, 2003, University of Aarhus, Denmark, awarded by iNANO committee.
GATE-98 awarded by Indian Institute of Technology (IIT), Delhi, India, 1998.  Merit-Cum-Means awarded by Indian Institute of Technology (IIT), Delhi, India, 1996.
Executive Summary
Professor Aloke Kanjilal is a recipient of prestigious Alexander Humboldt Fellowship. He received his Ph.D. degree in Physics from IIT Delhi in 2003, and Master degree in Physics from IIT Delhi in 1998. Before joining SNU, he served scientific and postdoctoral positions at Purdue University (USA), Helmholtz-Zentrum Dresden Rossendorf (Germany), University of Rome "La Sapienza" (Italy), NIMS (Japan) and University of Aarhus (Denmark). Prof. Kanjilal has extensive background in material processing, thin film technology, surface science, nanoscience and nanotechnology, structural characterization, ion beam implantation, mixing and modification, magnetic and transport measurements, and fabrication and characterization of optoelectronic devices. He has authored and co-authored over 65 research publications and book chapters, and holds two German patents.
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